RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Samsung M393A1G40DB0-CPB 8GB
Compare
A-DATA Technology DQVE1908 512MB vs Samsung M393A1G40DB0-CPB 8GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Samsung M393A1G40DB0-CPB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
10.9
Average value in the tests
Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
Below the latency in the PassMark tests, ns
49
66
Around -35% lower latency
Faster write speed, GB/s
8.7
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Samsung M393A1G40DB0-CPB 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
49
Read speed, GB/s
2,775.5
10.9
Write speed, GB/s
1,557.9
8.7
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
2427
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Samsung M393A1G40DB0-CPB 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ41UF8BDU5-GN-F 4GB
Teikon TMA851U6CJR6N-VKSC 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMK16GX4M1A2400C16 16GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMD64GX4M4B3466C16 16GB
Kingston ACR16D3LU1KNG/8G 8GB
AMD R538G1601U2S-UGO 8GB
Samsung M391B5673FH0-CH9 2GB
Kingston KHX3466C17D4/16GX 16GB
Kingston 9965525-144.A00LF 8GB
Corsair CMK32GX4M4A2400C12 8GB
Samsung M471A5244CB0-CWE 4GB
InnoDisk Corporation 16GB
Apacer Technology 78.01GA0.9K5 1GB
Corsair CMK8GX4M1A2666C16 8GB
Samsung DDR3 8GB 1600MHz 8GB
V-GEN D4S4GL32A16TS 4GB
Samsung M471B1G73BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMK32GX4M1A2400C16 32GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-4800C18-8GTRS 8GB
Corsair CMY8GX3M2A2666C10 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
×
Bug description
Source link