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A-DATA Technology VDQVE1B16 2GB
Samsung M378A1K43EB2-CWE 8GB

A-DATA Technology VDQVE1B16 2GB vs Samsung M378A1K43EB2-CWE 8GB

Overall score
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Overall score
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Differences Specifications Comments

Differences

A-DATA Technology VDQVE1B16 2GB Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.6
    Average value in the tests
  • Faster write speed, GB/s
    2,061.2 left arrow 12.0
    Average value in the tests
Samsung M378A1K43EB2-CWE 8GB Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    33 left arrow 46
    Around -39% lower latency
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Samsung M378A1K43EB2-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 33
  • Read speed, GB/s
    4,937.3 left arrow 17.6
  • Write speed, GB/s
    2,061.2 left arrow 12.0
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    759 left arrow 2910

A-DATA Technology VDQVE1B16 2GB RAM comparisons

takeMS International AG TMS2GS264D082665EQ 2GB
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Samsung M378A1K43EB2-CWE 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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