A-DATA Technology VDQVE1B16 2GB vs Samsung M378A2K43DB1-CTD 16GB

Overall score

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Overall score

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

Differences Specifications Comments

Differences

A-DATA Technology VDQVE1B16 2GB

Reasons to consider
A-DATA Technology VDQVE1B16 2GB

Faster reading speed, GB/s

4 15.3

Average value in the tests
Faster write speed, GB/s

2,061.2 11.9

Average value in the tests

Samsung M378A2K43DB1-CTD 16GB

Reasons to consider
Samsung M378A2K43DB1-CTD 16GB

Below the latency in the PassMark tests, ns

36 46

Around -28% lower latency
Higher memory bandwidth, mbps

21300 6400

Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications

A-DATA Technology VDQVE1B16 2GB

Samsung M378A2K43DB1-CTD 16GB

Main characteristics

Memory type

DDR2 DDR4
Latency in PassMark, ns

46 36
Read speed, GB/s

4,937.3 15.3
Write speed, GB/s

2,061.2 11.9
Memory bandwidth, mbps

6400 21300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

759 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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