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AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

AMD R538G1601U2S-UO 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Overall score
star star star star star
AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Differences Specifications Comments

Differences

AMD R538G1601U2S-UO 8GB Reasons to consider
AMD R538G1601U2S-UO 8GB
Report a bug
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Report a bug
  • Faster reading speed, GB/s
    15.6 left arrow 14.2
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 10.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 26
  • Read speed, GB/s
    14.2 left arrow 15.6
  • Write speed, GB/s
    10.0 left arrow 11.8
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2634 left arrow 2382

AMD R538G1601U2S-UO 8GB RAM comparisons

Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-4GRK 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM comparisons

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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