RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Compare
ASint Technology SSA302G08-EGN1C 4GB vs Crucial Technology CT8G4SFS8266.C8FE 8GB
Overall score
ASint Technology SSA302G08-EGN1C 4GB
Overall score
Crucial Technology CT8G4SFS8266.C8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
34
Around 24% lower latency
Reasons to consider
Crucial Technology CT8G4SFS8266.C8FE 8GB
Report a bug
Faster reading speed, GB/s
17.2
12.6
Average value in the tests
Faster write speed, GB/s
13.4
9.5
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
34
Read speed, GB/s
12.6
17.2
Write speed, GB/s
9.5
13.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2174
3055
ASint Technology SSA302G08-EGN1C 4GB RAM comparisons
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT8G4SFS8266.C8FE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965662-016.A00G 16GB
Samsung M471A2K43CB1-CTD 16GB
Samsung 1600 CL10 Series 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3600C14-16GTRG 16GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
Kingston KVR16N11/8-SP 8GB
Samsung M471A1K43DB1-CWE 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingston ACR16D3LS1NGG/2G 2GB
Crucial Technology CT8G4SFD824A.C16FE 8GB
A-DATA Technology AD73I1B1672EG 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3333C16-16GVR 16GB
Kingston 9905403-061.A00LF 2GB
Corsair CM4B16G1J2400A16K2-O 16GB
Kingston 99P5471-016.A00LF 8GB
Kingston 9965669-025.A00G 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-2133C15-8GVK 8GB
Report a bug
×
Bug description
Source link