Corsair CMD8GX3M2A2933C12 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Corsair CMD8GX3M2A2933C12 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score
star star star star star
Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 56
    Around 50% lower latency
  • Faster reading speed, GB/s
    20.1 left arrow 13.5
    Average value in the tests
  • Faster write speed, GB/s
    10.5 left arrow 9.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMD8GX3M2A2933C12 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 56
  • Read speed, GB/s
    13.5 left arrow 20.1
  • Write speed, GB/s
    9.3 left arrow 10.5
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2278 left arrow 2455
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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