RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
en
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Overall score
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Differences Specifications Comments

Differences

Corsair CMY8GX3M2A2666C10 4GB Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    17 left arrow 25
    Around 32% lower latency
  • Faster reading speed, GB/s
    22.8 left arrow 14.2
    Average value in the tests
  • Faster write speed, GB/s
    15.4 left arrow 7.4
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    17 left arrow 25
  • Read speed, GB/s
    22.8 left arrow 14.2
  • Write speed, GB/s
    15.4 left arrow 7.4
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    3391 left arrow 2104

Corsair CMY8GX3M2A2666C10 4GB RAM comparisons

Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM comparisons

Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons

Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Crucial Technology BLS4G4S26BFSD.8FBR2 4GB
Memory RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
Memory RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Memory RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Apacer Technology D12.2324WT.001 8GB
Apacer Technology D12.2324WT.001 8GB
Memory RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMW32GX4M4K3733C17 8GB
Corsair CMW32GX4M4K3733C17 8GB
Memory RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Crucial Technology BLS16G4D32AEST.M16FE 16GB
Memory RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Memory RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Memory RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Memory RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
Memory RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
G Skill Intl F4-3400C16-4GRBD 4GB
Memory RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
Memory RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Memory RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
Memory RAM