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Corsair CMY8GX3M2A2666C10 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Corsair CMY8GX3M2A2666C10 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score
star star star star star
Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Overall score
star star star star star
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Differences Specifications Comments

Differences

Corsair CMY8GX3M2A2666C10 4GB Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    17 left arrow 71
    Around 76% lower latency
  • Faster reading speed, GB/s
    22.8 left arrow 15.6
    Average value in the tests
  • Faster write speed, GB/s
    15.4 left arrow 6.4
    Average value in the tests
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    17 left arrow 71
  • Read speed, GB/s
    22.8 left arrow 15.6
  • Write speed, GB/s
    15.4 left arrow 6.4
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    3391 left arrow 1650

Corsair CMY8GX3M2A2666C10 4GB RAM comparisons

Micron Technology 4ATF1G64AZ-3G2B1 8GB
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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Corsair CMY8GX3M2A2666C10 4GB
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