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Corsair CMY8GX3M2A2666C10 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
71
Around 76% lower latency
Faster reading speed, GB/s
22.8
15.6
Average value in the tests
Faster write speed, GB/s
15.4
6.4
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
71
Read speed, GB/s
22.8
15.6
Write speed, GB/s
15.4
6.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3391
1650
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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