RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Compare
Crucial Technology CT51264BD160B.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Overall score
Crucial Technology CT51264BD160B.C16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD160B.C16F 4GB
Report a bug
Faster reading speed, GB/s
13.9
13.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
29
41
Around -41% lower latency
Faster write speed, GB/s
9.8
9.7
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
29
Read speed, GB/s
13.9
13.7
Write speed, GB/s
9.7
9.8
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2366
2407
Crucial Technology CT51264BD160B.C16F 4GB RAM comparisons
Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM comparisons
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HYMP125S64CP8-S6 2GB
G Skill Intl F4-4800C19-8GTESC 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Samsung 1600 CL10 Series 8GB
Kingston 9905630-063.A00G 16GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston MSI32D4S2S1ME-8 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMD16GX4M2B2400C10 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Patriot Memory (PDP Systems) PSD416G24002 16GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905622-025.A00G 4GB
Samsung DDR3 8GB 1600MHz 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CMU16GX4M2D3200C16 8GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMK32GX4M2B3466C16 16GB
Kingston KHX3200C18D4/8G 8GB
Avant Technology J642GU42J9266N2 16GB
Samsung M471B5273DH0-CK0 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Report a bug
×
Bug description
Source link