RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-3200C16-8GVS 8GB
Compare
Crucial Technology CT51264BF160B.M16F 4GB vs G Skill Intl F4-3200C16-8GVS 8GB
Overall score
Crucial Technology CT51264BF160B.M16F 4GB
Overall score
G Skill Intl F4-3200C16-8GVS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BF160B.M16F 4GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-8GVS 8GB
Report a bug
Faster reading speed, GB/s
17.4
11.8
Average value in the tests
Faster write speed, GB/s
12.6
8.2
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BF160B.M16F 4GB
G Skill Intl F4-3200C16-8GVS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
28
Read speed, GB/s
11.8
17.4
Write speed, GB/s
8.2
12.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1854
3085
Crucial Technology CT51264BF160B.M16F 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-3200C16-8GVS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMW8GX4M1Z3200C16 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
MemxPro Inc. D4S8GHIOFFC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Teikon TMA81GU6AFR8N-UHSC 8GB
Samsung M393B1K70CH0-YH9 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3000C15-8GRR 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C16-8GTZB 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
G Skill Intl F3-1333C9-4GIS 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston 99U5471-020.A00LF 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
Strontium EVMT8G1600U86S 8GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Kingston 9905403-515.A00LF 8GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Report a bug
×
Bug description
Source link