RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Compare
G Skill Intl F2-8500CL5-2GBPI 2GB vs Crucial Technology BLS4G4D26BFSE.8FB 4GB
Overall score
G Skill Intl F2-8500CL5-2GBPI 2GB
Overall score
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F2-8500CL5-2GBPI 2GB
Report a bug
Faster reading speed, GB/s
6
15.7
Average value in the tests
Faster write speed, GB/s
2,935.8
12.4
Average value in the tests
Reasons to consider
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Report a bug
Below the latency in the PassMark tests, ns
22
45
Around -105% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
45
22
Read speed, GB/s
6,336.8
15.7
Write speed, GB/s
2,935.8
12.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1144
3174
G Skill Intl F2-8500CL5-2GBPI 2GB RAM comparisons
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Crucial Technology BLS4G4D26BFSE.8FB 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-2400C17-16GIS 16GB
Smart Modular SF564128CJ8N6NNSEG 4GB
G Skill Intl F4-3200C15-16GVR 16GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3600C17-16GTZR 16GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
SK Hynix HMT451U6BFR8A-PB 4GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Samsung M391B5673EH1-CH9 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-2666C19-8GNT 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Avant Technology J642GU42J9266N4 16GB
AMD R5S38G1601U2S 8GB
Corsair CMW16GX4M2C3600C18 8GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-4000C18-8GTZRB 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMD16GX4M4A2800C16 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
×
Bug description
Source link