RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
30
Around 13% lower latency
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Faster reading speed, GB/s
16
13.2
Average value in the tests
Faster write speed, GB/s
10.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
30
Read speed, GB/s
13.2
16.0
Write speed, GB/s
8.4
10.6
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2070
3026
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
G Skill Intl F4-3000C15-4GTZ 4GB
Hexon Technology Pte Ltd HEXON 1GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Kingston 9905403-134.A00LF 2GB
Kingston KHX3333C16D4/16GX 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4200C19-4GTZ 4GB
Samsung M378B1G73EB0-CK0 8GB
Apacer Technology 78.C1GS7.AUW0B 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Samsung M378A2K43DB1-CVF 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology CT4G4DFS8213.8FA11 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
Panram International Corporation L421008G4C1528K34O8A 8
G Skill Intl F3-10600CL9-2GBNT 2GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Report a bug
×
Bug description
Source link