RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M393A5143DB0-CRC 4GB
Compare
G Skill Intl F3-2400C11-8GSR 8GB vs Samsung M393A5143DB0-CRC 4GB
Overall score
G Skill Intl F3-2400C11-8GSR 8GB
Overall score
Samsung M393A5143DB0-CRC 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2400C11-8GSR 8GB
Report a bug
Below the latency in the PassMark tests, ns
34
47
Around 28% lower latency
Faster reading speed, GB/s
16.8
10
Average value in the tests
Faster write speed, GB/s
11.3
7.5
Average value in the tests
Reasons to consider
Samsung M393A5143DB0-CRC 4GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2400C11-8GSR 8GB
Samsung M393A5143DB0-CRC 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
47
Read speed, GB/s
16.8
10.0
Write speed, GB/s
11.3
7.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2968
2308
G Skill Intl F3-2400C11-8GSR 8GB RAM comparisons
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-2400C11-8GXM 8GB
Samsung M393A5143DB0-CRC 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Samsung M378B5273CH0-CH9 4GB
A-DATA Technology DDR4 2400 2OZ 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Samsung M471A2K43CB1-CRCR 16GB
Corsair CMK16GX4M2B3200C16 8GB
Apacer Technology 76.B305G.D500B 4GB
AMD R538G1601U2S-UO 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KVR16N11/8-SP 8GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Kingston KHX8500D2K2/2GN 1GB
Kingston KHX2933C17D4/16G 16GB
Micron Technology 16JTF51264AZ-1G4M1 4GB
G Skill Intl F4-3200C16-8GTZKW 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CM4X16GE2400Z16K4 16GB
PNY Electronics PNY 2GB
Kingston X3XCFP-HYA 8GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX2400C12D4/4GX 4GB
Report a bug
×
Bug description
Source link