RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2666C12-8GTXD 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Compare
G Skill Intl F3-2666C12-8GTXD 8GB vs A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Overall score
G Skill Intl F3-2666C12-8GTXD 8GB
Overall score
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
Report a bug
Faster reading speed, GB/s
18.2
15
Average value in the tests
Faster write speed, GB/s
11.5
9.5
Average value in the tests
Reasons to consider
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Report a bug
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
28
Read speed, GB/s
18.2
15.0
Write speed, GB/s
11.5
9.5
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3067
2932
G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Samsung M471B5673FH0-CF8 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Ramaxel Technology RMSA3300MH78HBF-2666 16GB
Kingston 9965525-140.A00LF 8GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 99U5734-014.A00G 16GB
Kingston ACR512X64D3S13C9G 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSO8GX4M1A2133C15 8GB
Kingston KP223C-ELD 2GB
Kingston 9905702-029.A00G 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M2L3200C16 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905734-062.A00G 32GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KHX3200C16D4/8GX 8GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-4266C19-8GTRG 8GB
Report a bug
×
Bug description
Source link