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G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Compare
G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Overall score
G Skill Intl F3-2666C12-8GTXD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
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Below the latency in the PassMark tests, ns
28
29
Around 3% lower latency
Faster reading speed, GB/s
18.2
12.2
Average value in the tests
Faster write speed, GB/s
11.5
9.6
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
29
Read speed, GB/s
18.2
12.2
Write speed, GB/s
11.5
9.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3067
2443
G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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