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Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology AFLD416EH1P 16GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Micron Technology AFLD416EH1P 16GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
Micron Technology AFLD416EH1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Faster reading speed, GB/s
4
13.7
Average value in the tests
Reasons to consider
Micron Technology AFLD416EH1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
49
Around -75% lower latency
Faster write speed, GB/s
6.9
2,066.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology AFLD416EH1P 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
28
Read speed, GB/s
4,577.1
13.7
Write speed, GB/s
2,066.5
6.9
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
737
2312
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Micron Technology AFLD416EH1P 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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