RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Below the latency in the PassMark tests, ns
49
54
Around 9% lower latency
Faster reading speed, GB/s
4
15.2
Average value in the tests
Faster write speed, GB/s
2,066.5
14.3
Average value in the tests
Reasons to consider
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Report a bug
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
54
Read speed, GB/s
4,577.1
15.2
Write speed, GB/s
2,066.5
14.3
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
737
2938
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Samsung M393B1K70CH0-CH9 8GB
Avant Technology W641GU67J5213N8 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Corsair VSA2GSDS667C4 2GB
Corsair CMK8GX4M2B3200C16 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
SK Hynix HMA82GR7AFR8N-UH 16GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CM4X16GE2400C16S4 16GB
Kingston ACR256X64D3S1333C9 2GB
SK Hynix HMA851U6DJR6N-XN 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M2Z3466C16 8GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Kingston 99U5584-004.A00LF 4GB
Essencore Limited KD48GS481-26N1600 8GB
Kingston 9965516-112.A00LF 16GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Corsair CMY8GX3M2A2666C10 4GB
SK Hynix HMA82GR7MFR8N-UH 16GB
Report a bug
×
Bug description
Source link