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Hexon Technology Pte Ltd HEXON 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Hexon Technology Pte Ltd HEXON 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Overall score
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Differences Specifications Comments

Differences

Hexon Technology Pte Ltd HEXON 1GB Reasons to consider
Hexon Technology Pte Ltd HEXON 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 20.1
    Average value in the tests
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    56 left arrow 62
    Around -11% lower latency
  • Faster write speed, GB/s
    10.5 left arrow 1,843.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
Hexon Technology Pte Ltd HEXON 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    62 left arrow 56
  • Read speed, GB/s
    3,556.6 left arrow 20.1
  • Write speed, GB/s
    1,843.6 left arrow 10.5
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    542 left arrow 2455

Hexon Technology Pte Ltd HEXON 1GB RAM comparisons

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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