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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43EB2-CVF 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A1K43EB2-CVF 8GB

Overall score
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Overall score
star star star star star
Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Differences Specifications Comments

Differences

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 28
    Around 4% lower latency
Samsung M378A1K43EB2-CVF 8GB Reasons to consider
Samsung M378A1K43EB2-CVF 8GB
Report a bug
  • Faster reading speed, GB/s
    17.4 left arrow 16.7
    Average value in the tests
  • Faster write speed, GB/s
    14.5 left arrow 11.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 21300
    Around 1.1 higher bandwidth

Specifications

Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43EB2-CVF 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 28
  • Read speed, GB/s
    16.7 left arrow 17.4
  • Write speed, GB/s
    11.8 left arrow 14.5
  • Memory bandwidth, mbps
    21300 left arrow 23400
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    2756 left arrow 3419

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons

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Samsung M378A1K43EB2-CVF 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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