RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-3733C17-16GTZKK 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
G Skill Intl F4-3733C17-16GTZKK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Reasons to consider
G Skill Intl F4-3733C17-16GTZKK 16GB
Report a bug
Below the latency in the PassMark tests, ns
19
29
Around -53% lower latency
Faster reading speed, GB/s
20.2
12.1
Average value in the tests
Faster write speed, GB/s
18.1
7.8
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-3733C17-16GTZKK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
19
Read speed, GB/s
12.1
20.2
Write speed, GB/s
7.8
18.1
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2177
3905
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
G Skill Intl F4-3733C17-16GTZKK 16GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CMR32GX4M4C3466C16 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Apacer Technology GD2.111881.002 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) PSD416G21332 16GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
A-DATA Technology AD73I1C1674EV 4GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-2800C15-8GTZB 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2133C15-4GRR 4GB
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
Elpida EBJ40EG8BFWB-JS-F 4GB
AMD R9S48G3206U2S 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A1A43DB0-CPB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M2B3733C17 8GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2400C15-4GIS 4GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Kingston 9905712-001.B00G 16GB
Report a bug
×
Bug description
Source link