RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
33
Around 12% lower latency
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Faster reading speed, GB/s
17.8
13.4
Average value in the tests
Faster write speed, GB/s
12.5
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
33
Read speed, GB/s
13.4
17.8
Write speed, GB/s
9.0
12.5
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2423
3285
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BL16G32C16U4B.16FE 16GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3600C17-8GTRS 8GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMA82GU7MFR8N-TF 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Transcend Information TS512MSK64W6H 4GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Samsung M3 78T5663EH3-CF7 2GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMK32GX4M2Z3600C18 16GB
SK Hynix HMT325S6CFR8C-PB 2GB
G Skill Intl F4-3600C16-8GVKC 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2666C18-32GRS 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Super Talent F21UB8GS 8GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CM4X4GF2133C15S2 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-YK0 4GB
Report a bug
×
Bug description
Source link