RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Micron Technology 4ATF51264HZ-2G3B1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
35
Around 17% lower latency
Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
Faster reading speed, GB/s
14.8
13.4
Average value in the tests
Faster write speed, GB/s
11.2
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
35
Read speed, GB/s
13.4
14.8
Write speed, GB/s
9.0
11.2
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
2336
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 99U5702-095.A00G 8GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
Samsung M3 78T5663EH3-CF7 2GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMK128GX4M8X3800C19 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9965640-004.C00G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston K821PJ-MIH 16GB
Samsung M471B5173BH0-CK0 4GB
Kingston KF3600C16D4/8GX 8GB
Samsung M393B5170FH0-CH9 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMR64GX4M4C3200C16 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905599-010.A00G 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M378A5244CB0-CWE 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
KingSpec KingSpec 16GB
Report a bug
×
Bug description
Source link