RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Corsair CMW64GX4M8X3600C18 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Corsair CMW64GX4M8X3600C18 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Corsair CMW64GX4M8X3600C18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Corsair CMW64GX4M8X3600C18 8GB
Report a bug
Below the latency in the PassMark tests, ns
21
62
Around -195% lower latency
Faster reading speed, GB/s
17.2
7.4
Average value in the tests
Faster write speed, GB/s
13.1
5.9
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Corsair CMW64GX4M8X3600C18 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
21
Read speed, GB/s
7.4
17.2
Write speed, GB/s
5.9
13.1
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1612
3460
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Corsair CMW64GX4M8X3600C18 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B2G70BH0-CH9 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
Kingston KHX1866C9D3/8GX 8GB
G Skill Intl F4-3200C16-8GTZSW 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Kingston 9965433-034.A00LF 4GB
Kingston KHX3600C17D4/8GX 8GB
Samsung 1600 CL10 Series 8GB
DSL Memory D4SS12081SH21A-A 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-4266C19-8GTRS 8GB
Kingston KVT8FP-HYC 4GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology CT4G4DFS8266.M8FE 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Kingston K531R8-MIN 4GB
Kingston 9905665-020.A00G 4GB
Report a bug
×
Bug description
Source link