RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Overall score
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Report a bug
Reasons to consider
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
62
Around -121% lower latency
Faster reading speed, GB/s
12.2
7.4
Average value in the tests
Faster write speed, GB/s
9.3
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
62
28
Read speed, GB/s
7.4
12.2
Write speed, GB/s
5.9
9.3
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1612
2382
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM comparisons
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GS6JJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston XG9XKG-MIE 16GB
Samsung M393B1K70CH0-CH9 8GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905734-102.A00G 32GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2666C19-8GNT 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GZOH23F-18---------- 16GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3300C16-8GTZ 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
AMD R538G1601U2S-UO 8GB
Kllisre M471A1K43CB1-CTD 8GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
Apacer Technology 78.C1GET.9K10C 8GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology AO2P26KC8T1-BPYS 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston XVTW4H-MIE 32GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Corsair CMT64GX4M4K3600C18 16GB
Report a bug
×
Bug description
Source link