RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMT16GX4M2C3600C18 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMT16GX4M2C3600C18 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Corsair CMT16GX4M2C3600C18 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
28
Around 14% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Corsair CMT16GX4M2C3600C18 8GB
Report a bug
Faster reading speed, GB/s
20.9
16
Average value in the tests
Faster write speed, GB/s
16.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMT16GX4M2C3600C18 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
28
Read speed, GB/s
16.0
20.9
Write speed, GB/s
12.5
16.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3835
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Corsair CMT16GX4M2C3600C18 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 99U5474-010.A00LF 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Samsung M378B1G73EB0-CK0 8GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
Corsair VS1GB800D2 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 99U5474-038.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160UD102408-2666 16GB
Team Group Inc. Team-Elite-1333 4GB
Samsung M393A2K43BB1-CPB 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
SK Hynix HMA81GS6CJR8N-XN 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
Samsung M471A1G44AB0-CWE 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
G Skill Intl F4-2400C16-16GFT 16GB
Kingston HP669238-071-HYC 4GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMW16GX4M2Z3600C18 8GB
Unifosa Corporation GU502203EP0201 1GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-3200C16-8GVKB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M391A1G43EB1-CPB 8GB
Report a bug
×
Bug description
Source link