RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BL8G30C15U4B.8FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BL8G30C15U4B.8FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
31
Around 23% lower latency
Reasons to consider
Crucial Technology BL8G30C15U4B.8FE 8GB
Report a bug
Faster reading speed, GB/s
18.9
16
Average value in the tests
Faster write speed, GB/s
14.6
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
31
Read speed, GB/s
16.0
18.9
Write speed, GB/s
12.5
14.6
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3356
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BL8G30C15U4B.8FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KF3600C16D4/8GX 8GB
AMD R534G1601U1S-UO 4GB
Crucial Technology BLS8G4D240FSB.16FBD 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Kingston ACR256X64D3S1333C9 2GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Corsair CM2X1024-6400C4 1GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Corsair CMV16GX4M1A2133C15 16GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Apacer Technology 78.CAGP7.40C0B 8GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston XK2M26-MIE-NX 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Samsung M395T2863QZ4-CF76 1GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
Kingston ACR256X64D3S1333C9 2GB
V-GEN D4R8GL24A8R 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston XN205T-MIE 16GB
Report a bug
×
Bug description
Source link