RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology BLS8G4D26BFSE.16FE 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
29
Around 17% lower latency
Reasons to consider
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Report a bug
Faster reading speed, GB/s
17.3
16
Average value in the tests
Faster write speed, GB/s
13.9
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
29
Read speed, GB/s
16.0
17.3
Write speed, GB/s
12.5
13.9
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3134
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Elpida EBJ40EG8BFWB-JS-F 4GB
Kingston KHX3200C18D4/4G 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Corsair CMD16GX4M2E4000C19 8GB
Samsung M378T5663QZ3-CF7 2GB
Micron Technology 16ATF1G64AZ-2G1A2 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMSX64GX4M2A2933C19 32GB
Samsung M3 78T2863QZS-CF7 1GB
DSL Memory CIR-W4SUSS2408G 8GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGNK.4040B 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M471A1K1KCB1-CRC 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M393A5143DB0-CPB 4GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK16GX4M1B3000C15 16GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2666C18-4GRS 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-2800C15-4GVR 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK64GX4M4A2133C13 16GB
Apacer Technology 78.01G86.9H50C 1GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
Report a bug
×
Bug description
Source link