RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-16GTRG 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C14-16GTRG 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C14-16GTRG 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
20.4
16
Average value in the tests
Faster write speed, GB/s
18.8
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
20.4
Write speed, GB/s
12.5
18.8
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4382
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C14-16GTRG 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology AFLD48EH1P 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Shenzen Recadata Storage Technology 8GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
G Skill Intl F4-4000C16-16GVKA 16GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905702-007.A00G 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston KHX3200C16D4/16GX 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905701-010.A00G 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston M378A1K43CB2-CRC 8GB
Samsung M393B1K70QB0-CK0 8GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Avant Technology W641GU42J7240NB 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3600C19-16GTRS 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Samsung M378T5663QZ3-CF7 2GB
Transcend Information JM3200HSE-32G 32GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT32G4SFD832A.M16FB 32GB
Report a bug
×
Bug description
Source link