RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C16-16GTZNC 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3600C16-16GTZNC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3600C16-16GTZNC 16GB
Report a bug
Faster reading speed, GB/s
19.4
16
Average value in the tests
Faster write speed, GB/s
16.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
19.4
Write speed, GB/s
12.5
16.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3929
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C16-16GTZNC 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Maxsun MSD48G30Q3 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-16GTZNC 16GB
A-DATA Technology DDR3 1600 4GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology DDR4 3600 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2933C14-16GTZRX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation PUD43000C164G2NJK 4GB
Kingston 9905403-515.A00LF 8GB
Corsair CMW16GX4M2Z4000C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMN32GX4M2Z3600C18 16GB
Kingston 99U5403-036.A00G 4GB
Samsung M393A2G40EB1-CPB 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston MSI24D4S7S7MH-16 16GB
A-DATA Technology DQVE1908 512MB
A-DATA Technology HYQVF1B16 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMV4GX4M1A2400C16 4GB
Report a bug
×
Bug description
Source link