RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Reasons to consider
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Report a bug
Faster reading speed, GB/s
19.3
16
Average value in the tests
Faster write speed, GB/s
13.1
12.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
19.3
Write speed, GB/s
12.5
13.1
Memory bandwidth, mbps
19200
25600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2925
3246
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB RAM comparisons
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905403-174.A00LF 2GB
Micron Technology 18ASF2G72AZ-2G6D1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905665-023.A00G 4GB
takeMS International AG TMS2GB264D083805EV 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Corsair CMY16GX3M4A2133C8 4GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Kingston 99U5474-013.A00LF 2GB
INTENSO M418039 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Samsung M378A5143DB0-CPB 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905744-066.A00G 32GB
Samsung M393B2G70BH0-CK0 16GB
Avexir Technologies Corporation T 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston 9965589-030.D01G 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2666C19-16GRS 16GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2133C15-4GVK 4GB
A-DATA Technology DOVF1B163G2G 2GB
Apacer Technology 78.CAGPP.40C0B 8GB
Report a bug
×
Bug description
Source link