RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingmax Semiconductor GSAF62F-D8---------- 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster reading speed, GB/s
16
15.9
Average value in the tests
Reasons to consider
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
24
Around -4% lower latency
Faster write speed, GB/s
13.6
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
23
Read speed, GB/s
16.0
15.9
Write speed, GB/s
12.5
13.6
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
2545
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Essencore Limited IM44GU48N26-GIIHA0 4GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston 9905678-058.A00G 4GB
Samsung M378B5273CH0-CH9 4GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
Avant Technology F6451U64F9333G 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
G Skill Intl F5-6400J3239G16G 16GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
Kingston 9905403-170.A00LF 2GB
AMD R7S44G2606U1S 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Corsair CMSX8GX4M2A2666C18 4GB
Samsung M471A1K43DB1-CWE 8GB
G Skill Intl F4-3200C22-16GRS 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Apacer Technology GD2.1140CH.001 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M386A4K40BB0-CRC 32GB
Samsung M3 78T3354BZ0-CCC 256MB
Avant Technology J642GU42J2320NQ 16GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
‹
›
Report a bug
×
Bug description
Source link