RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TA48G30S815G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs V-Color Technology Inc. TA48G30S815G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
V-Color Technology Inc. TA48G30S815G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster write speed, GB/s
12.5
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
V-Color Technology Inc. TA48G30S815G 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
24
Around -33% lower latency
Faster reading speed, GB/s
17.2
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TA48G30S815G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
18
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
8.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2422
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
V-Color Technology Inc. TA48G30S815G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3000C16-8GISB 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston HP32D4U8S8HC-8XR 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Kingston 9905701-132.A00G 16GB
Avant Technology F641GU67F9333G 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMR32GX4M4C3200C16 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK16GX4M2C3200C16 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZR 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C19-8GNT 8GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD48GU880-32A160T 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C18-16GVK 16GB
Samsung M471B1G73EB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Report a bug
×
Bug description
Source link