RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TA48G30S815G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs V-Color Technology Inc. TA48G30S815G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
V-Color Technology Inc. TA48G30S815G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster write speed, GB/s
12.5
8.0
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
V-Color Technology Inc. TA48G30S815G 8GB
Report a bug
Below the latency in the PassMark tests, ns
18
24
Around -33% lower latency
Faster reading speed, GB/s
17.2
16
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
V-Color Technology Inc. TA48G30S815G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
18
Read speed, GB/s
16.0
17.2
Write speed, GB/s
12.5
8.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2422
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
V-Color Technology Inc. TA48G30S815G 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-8GVKB 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD32GX4M4C3466C16W 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK16GX4M2B3733C17 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Essencore Limited KD4AGU880-36A180C 16GB
Corsair CMX4GX3M2A1600C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
Kingston KVR533D2N4 512MB
Samsung M378A1K43DB2-CVF 8GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology ILG8GS2400A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
Corsair CMD8GX3M2A2933C12 4GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Kingston 9905458-017.A01LF 4GB
Kingston KYXC0V-MID 16GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Crucial Technology CT102464BA160B.M16 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43CB1-CTD 16GB
Report a bug
×
Bug description
Source link