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Kingston 9965525-018.A00LF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB

Kingston 9965525-018.A00LF 4GB vs Micron Technology CT8G4DFD8213.16FA11 8GB

Overall score
star star star star star
Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Overall score
star star star star star
Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Differences Specifications Comments

Differences

Kingston 9965525-018.A00LF 4GB Reasons to consider
Kingston 9965525-018.A00LF 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 28
    Around 4% lower latency
  • Faster reading speed, GB/s
    13.2 left arrow 12
    Average value in the tests
Micron Technology CT8G4DFD8213.16FA11 8GB Reasons to consider
Micron Technology CT8G4DFD8213.16FA11 8GB
Report a bug
  • Faster write speed, GB/s
    9.1 left arrow 8.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 9965525-018.A00LF 4GB
Micron Technology CT8G4DFD8213.16FA11 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 28
  • Read speed, GB/s
    13.2 left arrow 12.0
  • Write speed, GB/s
    8.6 left arrow 9.1
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2196 left arrow 2347

Kingston 9965525-018.A00LF 4GB RAM comparisons

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Samsung M471B1G73EB0-YK0 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB RAM comparisons

Samsung M386B4G70DM0-CMA4 32GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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