Kingston 99U5471-025.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Kingston 99U5471-025.A00LF 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Overall score
star star star star star
Kingston 99U5471-025.A00LF 4GB

Kingston 99U5471-025.A00LF 4GB

Overall score
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Differences

  • Below the latency in the PassMark tests, ns
    18 left arrow 26
    Around -44% lower latency
  • Faster reading speed, GB/s
    20.4 left arrow 12.7
    Average value in the tests
  • Faster write speed, GB/s
    17.2 left arrow 7.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 99U5471-025.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 18
  • Read speed, GB/s
    12.7 left arrow 20.4
  • Write speed, GB/s
    7.9 left arrow 17.2
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2118 left arrow 3814
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons