RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston HX318C10FK/4 4GB
Kingston HP32D4U2S8ME-16 16GB
Compare
Kingston HX318C10FK/4 4GB vs Kingston HP32D4U2S8ME-16 16GB
Overall score
Kingston HX318C10FK/4 4GB
Overall score
Kingston HP32D4U2S8ME-16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston HX318C10FK/4 4GB
Report a bug
Reasons to consider
Kingston HP32D4U2S8ME-16 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
69
Around -123% lower latency
Faster reading speed, GB/s
15.3
6.1
Average value in the tests
Faster write speed, GB/s
9.2
4.1
Average value in the tests
Higher memory bandwidth, mbps
25600
14900
Around 1.72 higher bandwidth
Specifications
Complete list of technical specifications
Kingston HX318C10FK/4 4GB
Kingston HP32D4U2S8ME-16 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
69
31
Read speed, GB/s
6.1
15.3
Write speed, GB/s
4.1
9.2
Memory bandwidth, mbps
14900
25600
Other
Description
PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
9-10-9-28 / 1866 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1116
2847
Kingston HX318C10FK/4 4GB RAM comparisons
Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB
Kingston HP32D4U2S8ME-16 16GB RAM comparisons
Kingston KHYXPX-HYJ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology GD2.2229BH.001 16GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Samsung M378B5673FH0-CH9 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C16-4GRB 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-3600C17-8GVK 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Panram International Corporation W4N2400PS-8G 8GB
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2800C15-8GTZB 8GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3466C16-4GVK 4GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C15-8GTZSK 8GB
Samsung 1600 CL10 Series 8GB
Samsung M471A2K43CB1-CRCR 16GB
Report a bug
×
Bug description
Source link