RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KHX2133C11D3/4GX 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Kingston KHX2133C11D3/4GX 4GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Kingston KHX2133C11D3/4GX 4GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KHX2133C11D3/4GX 4GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
37
Around -19% lower latency
Faster reading speed, GB/s
15.7
15.5
Average value in the tests
Faster write speed, GB/s
13.3
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KHX2133C11D3/4GX 4GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
31
Read speed, GB/s
15.5
15.7
Write speed, GB/s
10.1
13.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2595
3318
Kingston KHX2133C11D3/4GX 4GB RAM comparisons
Golden Empire CL11-12-12 D3-2400 4GB
Corsair CMSX32GX4M2A2666C18 16GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
Transcend Information JM3200HLG-8G 8GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2133C15-4GVK 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Crucial Technology CT51264BD160B.C16F 4GB
Samsung M378A1G43EB1-CRC 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Essencore Limited IM48GU88N26-GIIHA0 8GB
A-DATA Technology VDQVE1B16 2GB
Apacer Technology 78.BAGNF.40C0B 4GB
Samsung M391B5673EH1-CH9 2GB
Apacer Technology 78.CAGPE.AUF0B 8GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GU7AFR8N-UH 16GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 18ASF2G72PDZ-2G3B1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905711-015.A00G 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Report a bug
×
Bug description
Source link