RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M393A2G40EB1-CPB 16GB
Compare
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M393A2G40EB1-CPB 16GB
Overall score
Micron Technology 16JSF25664HZ-1G1F1 2GB
Overall score
Samsung M393A2G40EB1-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
Below the latency in the PassMark tests, ns
29
56
Around 48% lower latency
Faster reading speed, GB/s
10.5
9.3
Average value in the tests
Reasons to consider
Samsung M393A2G40EB1-CPB 16GB
Report a bug
Faster write speed, GB/s
7.7
7.1
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M393A2G40EB1-CPB 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
56
Read speed, GB/s
10.5
9.3
Write speed, GB/s
7.1
7.7
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1425
2200
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons
Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Samsung M393A2G40EB1-CPB 16GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Samsung M395T2863QZ4-CF76 1GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M378A5244CB0-CRC 4GB
AMD AE34G1601U1 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905712-048.A00G 16GB
Apacer Technology 78.C1GET.9K10C 8GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Kingston KVR533D2N4 512MB
Corsair CMD32GX4M4B2800C14 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Avant Technology J642GU42J5213N2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
AMD R5316G1609U2K 8GB
Corsair CMK32GX4M4B3200C16 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Report a bug
×
Bug description
Source link