RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston KKN2NM-MIE 4GB
Compare
Micron Technology 16JTF25664AZ-1G4F1 2GB vs Kingston KKN2NM-MIE 4GB
Overall score
Micron Technology 16JTF25664AZ-1G4F1 2GB
Overall score
Kingston KKN2NM-MIE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF25664AZ-1G4F1 2GB
Report a bug
Reasons to consider
Kingston KKN2NM-MIE 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
40
Around -5% lower latency
Faster reading speed, GB/s
14.9
13.6
Average value in the tests
Faster write speed, GB/s
11.2
8.3
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF25664AZ-1G4F1 2GB
Kingston KKN2NM-MIE 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
38
Read speed, GB/s
13.6
14.9
Write speed, GB/s
8.3
11.2
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2035
2174
Micron Technology 16JTF25664AZ-1G4F1 2GB RAM comparisons
Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Kingston KKN2NM-MIE 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston K531R8-MIN 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
Kingston KHX1600C9D3/8G 8GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMT32GX4M2C3200C14 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M393A1G43EB1-CRC 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Teikon TMA851S6CJR6N-VKSC 4GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
PNY Electronics PNY 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston HP26D4S9D8MJ-16 16GB
A-DATA Technology DDR3 1600 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Samsung M391B5673FH0-CH9 2GB
Kingston 9905624-044.A00G 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M393A1G40EB1-CRC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Report a bug
×
Bug description
Source link