Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Differences

  • Faster reading speed, GB/s
    18.5 left arrow 12.9
    Average value in the tests
  • Faster write speed, GB/s
    15.7 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 28
  • Read speed, GB/s
    12.9 left arrow 18.5
  • Write speed, GB/s
    9.0 left arrow 15.7
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 3601
RAM Latency Calculator
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