RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Crucial Technology CT32G4SFD832A.C16FE 32GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Crucial Technology CT32G4SFD832A.C16FE 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
51
52
Around 2% lower latency
Reasons to consider
Crucial Technology CT32G4SFD832A.C16FE 32GB
Report a bug
Faster reading speed, GB/s
16.1
15.6
Average value in the tests
Faster write speed, GB/s
13.7
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT32G4SFD832A.C16FE 32GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
52
Read speed, GB/s
15.6
16.1
Write speed, GB/s
11.8
13.7
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2687
2853
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology CT32G4SFD832A.C16FE 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Ramaxel Technology RMUA5200ME78HAF-3200 8GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX2400C14/16G 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Mushkin 99[2/7/4]198F 8GB
Nanya Technology NT512T64UH8B0FN-3C 512MB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Samsung M378A1K43EB2-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Kingston 99P5471-002.A00LF 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3200C15-16GTZ 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMG32GX4M2E3200C16 16GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix HMA851S6DJR6N-XN 4GB
Report a bug
×
Bug description
Source link