RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-4000C16-16GTRS 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
G Skill Intl F4-4000C16-16GTRS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C16-16GTRS 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
51
Around -104% lower latency
Faster reading speed, GB/s
18.7
15.6
Average value in the tests
Faster write speed, GB/s
17.2
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
25
Read speed, GB/s
15.6
18.7
Write speed, GB/s
11.8
17.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
4039
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C16-16GTRS 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Kingston KVR16N11/8-SP 8GB
Jinyu 16GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Corsair CMK16GX4M4B3300C16 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Team Group Inc. Team-Elite-1333 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Crucial Technology CT51264BA1339.C16F 4GB
INTENSO 5641160 8GB
Samsung M378B5673FH0-CH9 2GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905663-030.A00G 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Kingston 9905598-009.A00G 8GB
Avant Technology F6451U64F9333G 4GB
G Skill Intl F4-2800C15-16GVR 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.C1GS7.AUW0B 8GB
Report a bug
×
Bug description
Source link