RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Micron Technology 16ATF2G64AZ-2G1A1 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
14.9
Average value in the tests
Faster write speed, GB/s
11.8
10.2
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
51
Around -55% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
33
Read speed, GB/s
15.6
14.9
Write speed, GB/s
11.8
10.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2687
2800
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQVE1908 512MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2133C13D4/4GX 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Samsung M471B5273EB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3600C14-16GTZRA 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
Kingston 99U5471-012.A00LF 4GB
Micron Technology TEAMGROUP-UD4-3000 16GB
AMD R5S38G1601U2S 8GB
Corsair CM4X8GF2400C16N2 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3866C18-8GTZKW 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Lenovo LMKUFG68AHFHD-32A 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMW64GX4M4C3000C15 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4400C16-8GVK 8GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2666C19-32GNT 32GB
Crucial Technology CT102464BA160B.M16 8GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C14-16GTZSW 16GB
Report a bug
×
Bug description
Source link