RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster write speed, GB/s
11.8
10.6
Average value in the tests
Reasons to consider
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
51
Around -70% lower latency
Faster reading speed, GB/s
16
15.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
30
Read speed, GB/s
15.6
16.0
Write speed, GB/s
11.8
10.6
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2687
3026
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Kingston 99P5471-002.A00LF 2GB
Kingston KHX2400C15/8G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston KHX2933C17S4/32G 32GB
A-DATA Technology DDR3 1333+ 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-4266C17-16GTZRB 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C18-8GRS 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Samsung M471A1G44AB0-CWE 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMW64GX4M8C3466C16 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Crucial Technology CT102464BA160B.M16 8GB
Super Talent F24EB8GS 8GB
Kingston 9905471-001.A01LF 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3200C16-8GVSB 8GB
Report a bug
×
Bug description
Source link