RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix GKE160UD102408-2400 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs SK Hynix GKE160UD102408-2400 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
SK Hynix GKE160UD102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
51
71
Around 28% lower latency
Faster reading speed, GB/s
15.6
15.5
Average value in the tests
Faster write speed, GB/s
11.8
8.9
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
SK Hynix GKE160UD102408-2400 16GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix GKE160UD102408-2400 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
71
Read speed, GB/s
15.6
15.5
Write speed, GB/s
11.8
8.9
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
1986
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix GKE160UD102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMV8GX4M1A2400C16 8GB
Patriot Memory (PDP Systems) PSD22G6672 2GB
Galaxy Microsystems Ltd. GALAX GOC 2016 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston 9965596-023.B01G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSB.16FBD2 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Team Group Inc. Team-Elite-2133 4GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston XN205T-MIE2 16GB
Samsung M378A1K43EB2-CWE 8GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Kingston K531R8-MIN 4GB
Golden Empire CL18-20-20 D4-3200 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Report a bug
×
Bug description
Source link