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Micron Technology 8KTF51264HZ-1G6D1 4GB
Samsung SF4721G4CKHH6DFSDS 8GB

Micron Technology 8KTF51264HZ-1G6D1 4GB vs Samsung SF4721G4CKHH6DFSDS 8GB

Overall score
star star star star star
Micron Technology 8KTF51264HZ-1G6D1 4GB

Micron Technology 8KTF51264HZ-1G6D1 4GB

Overall score
star star star star star
Samsung SF4721G4CKHH6DFSDS 8GB

Samsung SF4721G4CKHH6DFSDS 8GB

Differences Specifications Comments

Differences

Micron Technology 8KTF51264HZ-1G6D1 4GB Reasons to consider
Micron Technology 8KTF51264HZ-1G6D1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 31
    Around 16% lower latency
  • Faster reading speed, GB/s
    11.5 left arrow 10.4
    Average value in the tests
  • Faster write speed, GB/s
    7.5 left arrow 5.3
    Average value in the tests
Samsung SF4721G4CKHH6DFSDS 8GB Reasons to consider
Samsung SF4721G4CKHH6DFSDS 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8KTF51264HZ-1G6D1 4GB
Samsung SF4721G4CKHH6DFSDS 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 31
  • Read speed, GB/s
    11.5 left arrow 10.4
  • Write speed, GB/s
    7.5 left arrow 5.3
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    1977 left arrow 1740

Micron Technology 8KTF51264HZ-1G6D1 4GB RAM comparisons

Micron Technology 8KTF51264HZ-1G6N1 4GB
Micron Technology 8KTF51264HZ-1G6E1 4GB

Samsung SF4721G4CKHH6DFSDS 8GB RAM comparisons

Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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