RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Compare
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Overall score
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Report a bug
Faster reading speed, GB/s
4
10
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
72
Around -106% lower latency
Faster write speed, GB/s
7.0
1,938.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
72
35
Read speed, GB/s
4,241.0
10.0
Write speed, GB/s
1,938.7
7.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
677
2068
Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM comparisons
Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM comparisons
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B4G70EMB-CK0 32GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3000C14-8GVK 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
AMD R5316G1609U2K 8GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Kingston KF560C40-16 16GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Kingston 9905471-002.A00LF 2GB
Kingston 9905599-029.A00G 4GB
Kingston HP669238-071-HYC 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Panram International Corporation W4U2666PS-8GC19 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Report a bug
×
Bug description
Source link