RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Crucial Technology CT4G4DFS824A.M8FE 4GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
Crucial Technology CT4G4DFS824A.M8FE 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
12
Average value in the tests
Reasons to consider
Crucial Technology CT4G4DFS824A.M8FE 4GB
Report a bug
Below the latency in the PassMark tests, ns
24
64
Around -167% lower latency
Faster write speed, GB/s
6.6
2,256.8
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
24
Read speed, GB/s
4,651.3
12.0
Write speed, GB/s
2,256.8
6.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
837
1433
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Crucial Technology CT4G4DFS824A.M8FE 4GB RAM comparisons
Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Samsung M378A1K43EB2-CWE 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMSX4GX3M1A1600C9 4GB
G Skill Intl F4-4000C19-8GTZKW 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Asgard VMA45UG-MEC1U2AW2 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZKWC 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMD64GX4M4A2666C15 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3000C14-8GVK 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C14-16GTZ 16GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2133C15-8GRR 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA81GS6DJR8N-VK 8GB
Samsung M378B5773DH0-CH9 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905624-009.A00G 8GB
Report a bug
×
Bug description
Source link