RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3200C16-32GTRG 32GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
G Skill Intl F4-3200C16-32GTRG 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Faster reading speed, GB/s
4
18.6
Average value in the tests
Faster write speed, GB/s
2,256.8
14.7
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-32GTRG 32GB
Report a bug
Below the latency in the PassMark tests, ns
29
64
Around -121% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
29
Read speed, GB/s
4,651.3
18.6
Write speed, GB/s
2,256.8
14.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
837
3765
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
G Skill Intl F4-3200C16-32GTRG 32GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9965669-018.A00G 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
SK Hynix Kingston 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M471B1G73QH0-YK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
Samsung M3 93T5750CZA-CE6 2GB
Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-3000C15-4GTZB 4GB
A-DATA Technology DDR3 1600 4GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW8GX4M1D3000C16 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CM4X16GE2400Z16K4 16GB
Kingston 9905471-002.A00LF 2GB
Kingston KHX3200C18D4/16G 16GB
Samsung 1600 CL10 Series 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung V-GeN D4S16GL32A8TS 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CM4B8G2J2666A15D 8GB
Report a bug
×
Bug description
Source link