RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMSO4GX3M1C1600C11 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Corsair CMSO4GX3M1C1600C11 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Corsair CMSO4GX3M1C1600C11 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
42
Around -50% lower latency
Faster reading speed, GB/s
12.6
9.7
Average value in the tests
Faster write speed, GB/s
8.3
6.0
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
42
28
Read speed, GB/s
9.7
12.6
Write speed, GB/s
6.0
8.3
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 9 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1396
2112
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Corsair CMSO4GX3M1C1600C11 4GB RAM comparisons
Corsair CMSO4GX3M1C1600C11 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston 9905471-002.A00LF 2GB
Kingston X2YH1K-MIE-NX 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Samsung M378A1K43EB2-CWE 8GB
EXCELERAM EKBLACK4163016AD 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Micron Technology 18ADF2G72AZ-2G3A1 16GB
AMD R5316G1609U2K 8GB
Kingston 99U5712-002.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited MD4U1636181DCW 16G
A-DATA Technology DQKD1A08 1GB
Apacer Technology 78.D2GG7.AU30B 16GB
A-DATA Technology DQVE1908 512MB
Avant Technology J642GU42J2320NQ 16GB
Crucial Technology CT2K102464BD160B 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Kingston 2GB-DDR2 800Mhz 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX2400C15D4/4G 4GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C17-8GVKB 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3200C16-16GTZ 16GB
Report a bug
×
Bug description
Source link