RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BL16G30C15U4R.M16FE1 16GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
42
Around -40% lower latency
Faster reading speed, GB/s
20.8
9.7
Average value in the tests
Faster write speed, GB/s
16.4
6.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
30
Read speed, GB/s
9.7
20.8
Write speed, GB/s
6.0
16.4
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1396
3703
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Crucial Technology BL16G30C15U4R.M16FE1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5173DB0-YK0 4GB
SK Hynix HMA851S6DJR6N-VK 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M2B3200C16 8GB
Kingston KP223C-ELD 2GB
Avant Technology W641GU48J7240ND 8GB
Kingston 99P5471-002.A00LF 2GB
Kingston XK2M26-MIE 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-3333C16-8GTZSK 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston KHX1866C10D3/8GX 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK32GX4M2A2400C14 16GB
Kingston 9905403-061.A00LF 2GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-2133C15-4GNT 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Report a bug
×
Bug description
Source link